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First Implementation of Edge-Contacted α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors and their
Jong-Hyun Kim1, Seung-Hwan Kim2, Euyjin Park3
1Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|August 13, 2025
Summary
This study introduces an edge-contact configuration for α-In2Se3 ferroelectric semiconductor field-effect transistors (FeS-FETs). This novel design significantly enhances memory performance by optimizing Schottky barrier height and preserving ferroelectricity.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) van der Waals ferroelectric semiconductors like α-In2Se3 are crucial for nonvolatile memory devices.
- Ferroelectric Semiconductor Field-Effect Transistors (FeS-FETs) show promise, but their performance is sensitive to contact configurations.
- The impact of source/drain (S/D) contact configurations on α-In2Se3 FeS-FET memory performance has been underexplored.
Purpose of the Study:
- To investigate the effect of S/D contact configurations on α-In2Se3 FeS-FET memory performance.
- To demonstrate a novel edge-contact configuration for α-In2Se3 FeS-FETs.
- To understand how contact modifications influence ferroelectric behavior and device metrics.
Main Methods:
- Fabrication of α-In2Se3 FeS-FETs utilizing a novel edge-contact configuration.
- Investigation of Fermi-level pinning mitigation through 1D interface pinning dipoles.
- Modulation of the initial Schottky Barrier Height (SBH) via the edge-contact design.
- Characterization of ferroelectric resistance switching ratio and memory window enhancement.
Main Results:
- The edge-contact configuration effectively mitigates strong Fermi-level pinning.
- The novel design modulates the initial SBH, leading to improved device characteristics.
- Significant enhancements were observed: a 2.33-fold increase in ferroelectric resistance switching ratio and a 1.35-fold increase in memory window.
- These improvements are attributed to SBH modulation and reduced interference from incompletely switched layers.
Conclusions:
- Contact configuration critically influences ferroelectric behavior in 2D materials.
- The demonstrated edge-contact design offers a pathway to optimize α-In2Se3 FeS-FETs for advanced memory applications.
- This work provides a framework for developing next-generation neuromorphic computing and artificial heterosynaptic transistors.
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