Growth and Characterization of Ga₂O₃ for Power Nanodevices Using Metal Nanoparticle Catalysts

A simple and inexpensive thermal oxidation process is used to grow β-Ga₂O₃ oxide (β-Ga₂O₃) thin films/nanorods on a c-plane (0001) sapphire substrate using Ag/Au catalysts. The effect of these catalysts on the growth mechanism of Ga₂O₃ was studied by different characterization techniques, including X-ray diffraction analysis (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive X-ray analysis (EDX). The XRD results of the grown Ga₂O₃ on a sapphire substrate show three sharp diffraction peaks located at 19.31°, 38.70° and 59.38° corresponding to the 2¯01, 4¯02 and 6¯03 planes of β-Ga₂O₃. Field Emission Scanning Electron Microscope (FESEM) analysis showed the formation of longer and denser Ga₂O₃ nanowires at higher temperatures, especially in the presence of silver nanoparticles as catalysts.