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Tuning Phase Stability and Band Gap in Vacancy-Ordered Double Perovskites Rb(2- x )CsxSnI6 Through Variations in
R Chandan1, Nagale S Vishwajith1, Khyati Anand2
1New Chemistry Unit, International Centre for Materials Science, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore, 560064, India.
We synthesized Rb2SnI6, Rb1.1Cs0.9SnI6, and Cs2SnI6 double perovskites. A-site cation engineering was found to effectively tune their structure and optoelectronic properties, crucial for lead-free halide perovskites.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Crystallography
Background:
- A2SnI6 vacancy-ordered double perovskites are gaining attention for their potential applications.
- Their phase instabilities offer a route to tune structural and functional properties.
- Understanding these phase transitions is key to material design.
Purpose of the Study:
- To synthesize Rb2SnI6, Rb1.1Cs0.9SnI6, and Cs2SnI6 using solution methods.
- To investigate the phase transitions of these double perovskites under varying temperatures.
- To explore the effect of A-site cation engineering on their structure and optoelectronic properties.
Main Methods:
- Solution synthesis of targeted A2SnI6 double perovskite compounds.
- Variable temperature powder X-ray diffraction (PXRD) for structural analysis.
- Calorimetric studies to confirm phase transitions.
Main Results:
- A new cubic (Fm-3m) structure was identified for Rb2SnI6 at 320 K.
- Partial Cs+ substitution for Rb+ lowered the cubic phase transition temperature.
- Optical band gaps decreased with increasing A-site cation size, ranging from 1.28-1.33 eV.
Conclusions:
- A-site cation engineering is a viable strategy to control the phase stability and optoelectronic properties of A2SnI6 double perovskites.
- The findings provide insights into the structure-property relationships of these lead-free halide perovskites.
- This work contributes to the development of novel materials for optoelectronic applications.
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