Transport properties of group III doped double-walled SiC nanotubes: comparative study of in-wall and out-wall doping

In this study, the effects of groupIIIelement doping and the inter-wall coupling mechanism on the transport properties of double-walled silicon carbide (SiC) nanotubes are systematically investigated. The results indicate that doping withB,Al, andGaenhances the conductivity of double-walled SiC nanotubes (SiCNTs) by increasing the carrier concentration, with boron doping exhibiting the most significant improvement. By comparing the electrical conductivity, carrier concentration, and mobility in groupIII-doped single- and double-walled SiCNTs (DWSiCNT), it is found that inter-wall coupling enhances carrier concentration in DWSiCNTs, with a more pronounced effect observed when the inner wall is doped. Furthermore, doping with groupIIIelements improves the p-type semiconducting characteristics of DWSiCNTs. These findings offer theoretical insight into the mechanism of inter-wall coupling in DWSiCNTs and suggest potential avenues for advancing SiC-based nano-materials in micro- and nano-electronic device applications.