Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Immune mechanisms in chronic kidney disease-mineral and bone disorder: current insights and therapeutic implications.

Frontiers in medicine·2025
Same author

Anatomically and metabolically informed diffusion for unified denoising and segmentation in low-count PET imaging.

Medical image analysis·2025
Same author

Automated Quantification of Lens Cortex and Nuclear Opacity Based on Swept-Source Anterior Segment Optical Coherence Tomography.

Journal of refractive surgery (Thorofare, N.J. : 1995)·2025
Same author

LeqMod: Adaptable Lesion-Quantification-Consistent Modulation for Deep Learning Low-Count PET Image Denoising.

IEEE transactions on medical imaging·2025
Same author

Recent progress in the patterning of perovskite films for photodetector applications.

Light, science & applications·2025
Same author

Clinical features and prognosis analysis of patients with follicular lymphoma: a real-world study in China.

Annals of hematology·2025

Related Experiment Video

Updated: Jul 13, 2026

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels
07:13

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

Published on: April 16, 2017

10.9K

Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access

Yinchi Liu1,2, Jiajia Tao3, Xiaoyu Dou4

  • 1College of Integrated Circuits and Micro-Nano Electronics, Fudan University, Shanghai, 200433, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|August 14, 2025
PubMed
Summary

A new zirconium-rich layer strategy enhances hafnium zirconium oxide (HZO) ferroelectric devices for embedded memory. This approach achieves low operating voltage, high ferroelectricity, and robust reliability for scaled CMOS technology.

Keywords:
back‐end‐of‐lineferroelectricityreliabilitytensile strainzirconium‐rich layer

More Related Videos

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.6K

Related Experiment Videos

Last Updated: Jul 13, 2026

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels
07:13

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

Published on: April 16, 2017

10.9K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.6K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • Hafnium oxide (HfO2)-based ferroelectric devices are promising for embedded memory due to CMOS compatibility and scalability.
  • Challenges like polarization degradation and thermal budget issues hinder the integration of scaled Hf0.5Zr0.5O2 (HZO) thickness in high-performance applications.
  • Existing ferroelectric devices face limitations in operating voltage, reliability, and data retention for advanced computing.

Purpose of the Study:

  • To develop an effective strategy to overcome the limitations of scaled Hf0.5Zr0.5O2 (HZO) ferroelectric devices.
  • To improve ferroelectricity, reduce operating voltage, and enhance reliability in HZO-based ferroelectric capacitors.
  • To enable the integration of ferroelectric random access memory (FeFET) in scaled CMOS technology nodes.

Main Methods:

  • Fabrication of a ferroelectric capacitor with a sub-6 nm Hf0.5Zr0.5O2 (HZO)/zirconium-rich layer (Zr-RL)/HZO stack.
  • Characterization of ferroelectric properties, including remanent polarization (2Pr) and coercive voltage.
  • First-principles calculations to investigate the effect of Zr-RL on strain and crystallization.
  • Reliability testing, including breakdown voltage, endurance, and data retention measurements.

Main Results:

  • Achieved remarkably low operating voltage of 1.0 V and high ferroelectricity with 2Pr of 43.4 µC cm⁻² and a coercive voltage of 0.75 V.
  • Demonstrated that the Zr-RL induces tensile strain, reducing growth barriers and facilitating crystallization under a low thermal budget.
  • Showcased robust reliability with a breakdown voltage of 3.69 V, endurance exceeding 10^11 cycles, and a retention time of 10 years.

Conclusions:

  • The developed Zr-RL strategy effectively addresses polarization degradation and thermal budget issues in scaled HZO ferroelectric devices.
  • The HZO/Zr-RL/HZO stack enables low-voltage operation, high ferroelectricity, and excellent reliability, making it suitable for advanced memory applications.
  • This research provides insights for developing back-end-of-line-compatible ferroelectric random access memory for scaled CMOS technology nodes.