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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Direct integration of optoelectronic arrays with arbitrary non-developable structures
Meng Wang1, Fengren Cao1, Linxing Meng1
1School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Suzhou Key Laboratory of Intelligent Photoelectric Perception, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, People's Republic of China.
Abstract:
The extension of optoelectronic devices from planar to non-developable structures has led to remarkable success in bionics, optical imaging and soft electronics. However, non-developable optoelectronic devices are achieved mainly via physical deformations and limited to a few geometries. Here we report a self-assembly perovskite strategy for integrating optoelectronic arrays with arbitrary non-developable structures. The perovskite films are grown from a rapid nucleation-dominated crystallization driven by the low energy fluctuation of lead iodide solution, where the fluid precursor can be evenly dispersed along non-developable substrates by surface tension and then self-assembles into compact films through gaseous manipulation. The strategy covers arbitrarily shaped substrates with three-dimensional length scales over 106 orders of magnitude and enables the unique structural manipulations of photodiode arrays with micrometre precision. As a proof of concept, the theoretical focal surface of a single-lens image system is realized into a non-developable sensor, effectively correcting the off-axis coma aberrations compared with its planar or hemispherical counterpart.
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