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Published on: November 11, 2013
Preparation and Electrochemical Performance of N-Doped HxV2O5/CeVO4 Composite Films as Stable Cathodes for Aqueous
Qi Ge1, Hanxiao Bian1, Haiyan Xu1,2
1Anhui Provincial Key Laboratory of Advanced Civil Engineering Materials of Anhui Province, Anhui Jianzhu University, Hefei, Anhui 230022, P. R. China.
Abstract:
Aqueous zinc-ion batteries (AZIBs) have attracted considerable attention due to their low cost, high safety, and environmental friendliness, however, the structural problems triggered by the repeated insertion and extraction of Zn2+ in vanadium-based cathode materials remain a key challenge restricting their development. In this work, N-doped HxV2O5/CeVO4 composite films were successfully prepared on indium-tin-oxide (ITO) conductive glass by low-temperature liquid-phase deposition combined with an annealing process. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy were employed to systematically characterize the differences in crystal structure, morphological evolution, and microscopic properties of the thin-film electrodes at various annealing temperatures. In order to inhibit the dissolution of the electrode during the reaction process, paperboard was introduced as a physical barrier layer in the electrochemical tests, and the galvanostatic charge/discharge (GCD) test results showed that the paperboard system could effectively improve the cycling stability. Among them, the composite film annealed at 450 °C showed the best performance: 83.9% (223.94 mA h m-2) capacity retention after 100 cycles at 100 mA m-2 current density, significantly better than that of the 500 °C sample. XRD and XPS analyses show that the tunnel structure of HxV2O5 provides high-capacity storage sites. At the same time, the tetragonal zirconium skeleton of CeVO4 synergistically enhances the stability of the material by suppressing the structural collapse caused by Zn2+ insertion/extraction. Nitrogen doping further enlarges the HxV2O5 lattice spacing ((200) crystallite spacing increased from the standard 0.576 to 0.607 nm), optimizing the ion diffusion kinetics. This study provides a path for developing highly stable vanadium-based composite electrodes through a synergistic strategy of atomic doping and composite structure design.
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