Unidirectional electric field enables reversible ferroelectric domain engineering.

Xingan Jiang1, Muzhi Li2, Yuanyuan Cui3

  • 1Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City, China.

Nature Communications
|August 15, 2025
PubMed
Summary

Researchers demonstrated reversible ferroelectric domain switching in CuInP2S6 using unipolar electric fields, driven by copper ion migration. This breakthrough enables programmable domain patterns and shape memory effects for advanced information storage and neuromorphic computing.

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