Statistics on Oxygen Vacancy Defects in Amorphous HfO2: A Neural-Network Interatomic Potential Assisted

Shuqi Tang1, Kang Wang1, Menglin Huang1

  • 1College of Integrated Circuits and Micro-Nano Electronics, and Key Laboratory of Computational Physical Sciences (MOE), Fudan University, Shanghai, 200433, China.

Small Methods
|August 18, 2025
PubMed
Summary

Predicting defect properties in amorphous materials is challenging. This study introduces a graph neural network potential for accurate oxygen vacancy defect calculations in amorphous hafnium oxide, establishing criteria for reliable supercell modeling.

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