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Perpendicular Magnetic Anisotropy in FeRh Thin Films with Coexisting Magnetic Phases
Mengting Zou1,2, Yali Xie2, Huali Yang2
1School of Physical Science and Technology, Ningbo University, Ningbo, 315211, P. R. China.
Researchers demonstrated a reorienting magnetic easy axis in FeRh films during the antiferromagnetic-ferromagnetic phase transition. This finding is crucial for developing advanced spintronic devices utilizing perpendicular magnetic anisotropy (PMA).
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Perpendicular magnetic anisotropy (PMA) in single-layer films is vital for advanced spintronic devices due to high integration density, energy efficiency, and stability.
- Theoretical studies predicted a magnetic easy axis reorientation from out-of-plane (OP) to in-plane (IP) in FeRh films during the antiferromagnetic-ferromagnetic (AF-FM) phase transition.
- Experimental observation of OP magnetic anisotropy in FeRh films remains limited.
Purpose of the Study:
- To experimentally demonstrate the continuous reorientation of the magnetic easy axis in FeRh films during the AF-FM phase transition.
- To investigate the influence of film thickness on the anisotropy transition temperature.
- To elucidate the underlying mechanisms governing the magnetic anisotropy transition.
Main Methods:
- Fabrication of single-layer FeRh films.
- Magnetic domain imaging to observe anisotropy transitions.
- Temperature-dependent measurements to study phase transitions and anisotropy behavior.
Main Results:
- Demonstrated a continuous reorientation of the magnetic easy axis from OP to IP directions in FeRh films during the AF-FM phase transition.
- Observed that the anisotropy transition temperature increases with increasing film thickness.
- Identified magnetocrystalline anisotropy as the dominant factor for OP easy axis nucleation at AF state, with shape anisotropy progressively dominating towards IP orientation at higher temperatures.
Conclusions:
- The study reveals novel anisotropy transition behavior in FeRh films.
- Successfully induced PMA in thick single-layer FeRh films.
- Provides critical experimental insights for the application of FeRh in spintronic devices.
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