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Published on: July 12, 2017
High-power gas switches triggered by GaAs photoconductive semiconductor switches with low self-triggering probability
Long Hu1, Yingxiang Yang2, Yutong Yin1
1Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
Abstract:
As avalanche gallium arsenide photoconductive semiconductor switches (GaAs PCSS) operate under high-voltage and high-current environments, the switches suffer from serious self-triggering problems. This paper proposes a novel sidewall triggering method to mitigate the self-triggering effect of avalanche GaAs PCSS. Compared with the traditional planar triggering method, the self-triggering probability of GaAs PCSS triggered by the sidewall method is reduced from 5.2 × 10-3 to 7.35 × 10-5, which is about two orders of magnitude lower. Meanwhile, an experimental study of sidewall GaAs PCSS triggered high power gas switching. The experimental results show that the GaAs PCSS is able to successfully trigger a high-power gas switch with a turn-on delay time jitter of 1.53 ns at 40 kV and 0.3 MPa. The feasibility of the side-wall GaAs PCSS for triggering the gas switch is verified.

