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Published on: January 6, 2016
Strategic defect engineering and valence modulation in B-doped CeO2 nanoparticles for highly sensitive and reliable
Hao-Ran Li1, Huan Xu1, Zi-Yi Zheng1
1Anhui Province Industrial Generic Technology Research Center for Alumics Materials, Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, School of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, People's Republic of China.
Abstract:
Boron-doped CeO2 (B-CeO2) modified electrodes were developed for the sensitive detection of p-nitrophenol (PNP). The CeO2 and B-CeO2 nanomaterials were characterized via various techniques, including scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS), and the successful doping of B and the maintenance of the crystal structure of CeO2 were confirmed. The B-CeO2 showed an average particle size ranging from 50 to 100 nm. B doping increased the proportion of Ce(III), facilitated faster redox cycling between Ce(III) and Ce(IV), and resulted in the formation of oxygen vacancies (OVs), which served as additional active sites. The B-CeO2 electrode exhibited high sensitivity with a detection limit of 26 nmol L-1 in the concentration range 0-10 μmol L-1. Furthermore, B-CeO2 showed excellent resistance to interference from both organic pollutants and inorganic ions, making it suitable for complex environmental applications. Recovery tests on spiked samples yielded impressive results, with recoveries ranging from 92.67% to 103.25%, demonstrating the sensor's potential for real-world applications. These findings reveal the potential of B-CeO2 for efficient, practical applications in the electrochemical detection of environmental pollutants and for advancing sensor technologies in environmental monitoring.
