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A Widely Tunable Spin-Orbit Torque Device through the Silicon Compatible CMOS Platform.

Qi Lu1, Fuzhu Liu2, Bin Peng1

  • 1State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.

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Researchers developed a tunable spin-orbit torque device integrated into CMOS technology. This innovation enables low-voltage operation and faster speeds for magnetic random-access memory (MRAM), paving the way for advanced spintronic applications.

Keywords:
CMOS compatiblegate voltage controlspin‐orbit torquespin‐orbitronics

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Area of Science:

  • Spintronics
  • Semiconductor device physics
  • Materials science

Background:

  • Voltage-controlled spin-orbit torque is crucial for next-generation spintronic devices like nonvolatile memory and spin logic.
  • Current challenges in voltage-controlled MRAM include integration difficulties and high operating voltages.
  • Significant progress has been made in electric field control of spin-orbit torques.

Purpose of the Study:

  • To report a tunable spin-orbit torque device fully integrated within CMOS technology.
  • To address the limitations of integration and operating voltage in practical MRAM applications.
  • To demonstrate a device with large tunability and low operating voltage.

Main Methods:

  • Development of hybrid architectures for integrated MRAM devices.
  • Integration of tunable spin-orbit torque devices within CMOS technology.
  • Characterization of device performance, including write speed and current thresholds.

Main Results:

  • The proposed integrated MRAM devices exhibit significant acceleration in write speed.
  • Lower current thresholds were achieved compared to existing technologies.
  • The device demonstrates large tunability and operates at a low voltage.

Conclusions:

  • The developed tunable spin-orbit torque device facilitates commercial exploitation of spintronic technologies.
  • This work is promising for the advancement of spin transistors and unconventional computing.
  • The integration within CMOS technology overcomes practical limitations for MRAM applications.