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Binary B-Te Selectors Reinvented: Confined Conductive Paths Unlock Superior Ovonic Threshold Switching
Hoedon Kwon1, Kwangsik Jeong2, Yeonwoo Seong1
1Department of Physics, Yonsei University, Seoul 03722, Republic of Korea.
ACS Applied Materials & Interfaces
|August 21, 2025
Summary
Boron telluride (BxTe) thin films improve ovonic threshold switching (OTS) device thermal stability and electrical endurance. Optimized BxTe exhibits lower off-current density while maintaining excellent switching, outperforming other Te-based OTS materials.
Area of Science:
- Materials Science
- Solid-State Physics
- Device Engineering
Background:
- Te-based ovonic threshold switching (OTS) materials offer low-voltage operation and fast switching.
- However, their low crystallization temperature limits thermal stability and electrical endurance.
- Existing solutions involve element doping or complex compositions.
Purpose of the Study:
- Investigate the OTS device properties of simple two-component BxTe thin films.
- Systematically study the effect of varying boron content on film properties.
- Optimize BxTe composition for enhanced performance.
Main Methods:
- Fabrication and electrical characterization of BxTe thin films.
- Band structure analysis.
- Bonding configuration studies.
Main Results:
- Increasing boron content improved off-state insulating properties and film thermal stability.
- Optimized BxTe devices showed significantly reduced off-current density.
- Excellent switching characteristics were maintained, surpassing previous Te-based OTS materials.
Conclusions:
- Boron incorporation in Te-based OTS materials enhances thermal stability and reduces off-current.
- Unique bonding configurations and structural features of boron contribute to improved device performance.
- BxTe presents a promising material for advanced OTS applications.
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