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Updated: Sep 10, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Magnetic Proximity Induced Giant Enhancement of Valley Polarization and Zeeman Splitting in WS2/Fe3GaTe2
Wajid Ali1, Liuli Yang1,2, Yunfei Xie1
1Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
Abstract:
Substrate engineering offers a powerful approach to tailoring quasiparticle interactions in two-dimensional (2D) materials for valley-quantum devices. Here, a significantly enhanced valley polarization of 67% has been observed in a WS2 monolayer on a thin Fe3GaTe2 (FGT) layer under far-off resonant excitation at 10 K, which is much higher than that of 16% detected from WS2 monolayer. This enhancement is attributed to the magnetic proximity effect, which leads to a shorter exciton lifetime in the heterostructure without affecting the valley scattering time. The temperature dependence of valley polarization strongly correlates with the thermomagnetic behavior of the FGT film, suggesting a strong exciton-magnon coupling. Additionally, we observe a valley Zeeman splitting of -5 meV, corresponding to an effective Landé g-factor of -66.03, supported by first-principles calculations. These findings underscore the importance of substrate engineering in modulating intrinsic valley carriers of ultrathin 2D materials, opening new avenues for valleytronic devices.
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