Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

962
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
962
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

478
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
478
MOSFET01:16

MOSFET

576
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
576
Characteristics of MOSFET01:17

Characteristics of MOSFET

492
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
492
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

506
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
506

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Engineered promoter system enables high-efficiency transgenic CRISPR editing in Malaria transmitting mosquito <i>Anopheles sinensis</i>.

Zoological research·2026
Same author

Host hydraulics constrain mistletoe resistance to drought-induced embolism.

The New phytologist·2026
Same author

Synergistic defect-interface-photocarrier modulation based on IGZO/HfO<sub>2</sub> heterojunction memristors for neuromorphic visual processing.

Journal of colloid and interface science·2026
Same author

Covalent Organic Frameworks with Deep Eutectic Linkages for Low-Concentration Carbon Capture.

Journal of the American Chemical Society·2026
Same author

Hydraulically Enhanced Electrostatic Creeping Actuator Enabled by a Liquid-Metal Fluid Electrode.

ACS applied materials & interfaces·2026
Same author

Acidic Electron Acceptors in Imine-Linked Covalent Organic Framework for Enhanced Gas Sensing With Field-Effect Transistor Evaluation.

Angewandte Chemie (International ed. in English)·2026

Related Experiment Video

Updated: Sep 10, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K

High-Entropy Oxide Memristors for Neuromorphic Computing: From Material Engineering to Functional Integration.

Jia-Li Yang1,2, Xin-Gui Tang3,4, Xuan Gu1,2

  • 1School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou, 510006, People's Republic of China.

Nano-Micro Letters
|August 25, 2025
PubMed
Summary

High-entropy oxides (HEOs) show promise for neuromorphic computing due to their unique properties enabling memristive behavior. Further research in materials design and integration is crucial for advancing brain-inspired electronics.

Keywords:
Configurational entropyHigh-entropy oxidesMemristorsNeuromorphic computingResistive switching

More Related Videos

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Related Experiment Videos

Last Updated: Sep 10, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • High-entropy oxides (HEOs) possess unique characteristics like entropy-stabilized structures and multivalent cations.
  • These properties facilitate intrinsic memristive behaviors, including forming-free switching and multilevel conductance.
  • HEOs are thus highly attractive for developing advanced neuromorphic computing systems.

Purpose of the Study:

  • To review recent advancements in high-entropy oxide memristors.
  • To explore materials engineering, switching mechanisms, and synaptic emulation in HEO-based devices.
  • To examine the potential of HEOs for energy-efficient, brain-inspired electronics.

Main Methods:

  • Review of literature focusing on HEO memristors.
  • Analysis of switching mechanisms, including vacancy migration, phase transitions, and valence-state dynamics.
  • Examination of HEOs in both amorphous and crystalline states for memristive applications.

Main Results:

  • HEOs exhibit forming-free resistive switching and multilevel conductance modulation.
  • Key switching mechanisms identified include vacancy migration, phase transitions, and valence-state dynamics.
  • HEO memristors demonstrate potential for emulating synaptic functions like short-term plasticity and spike-timing-dependent learning.

Conclusions:

  • HEO memristors offer a promising route for neuromorphic computing applications.
  • Challenges in conductance precision, variability control, and scalable integration need to be addressed.
  • Further development requires integrated efforts in materials design, interface optimization, and modeling for advanced brain-inspired electronics.