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Updated: Sep 10, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Strain-tunable MoSe2/ZrCl2 heterostructures: first-principles insights into photogalvanic and switching device
Zhonghui Xu1,2,3, Hongyang Yu1,3, Bing Luo2,3
1School of Information Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China.
None:
Two-dimensional (2D) heterostructure materials, known for their tunable multifunctionality and low-dimensional confinement effects, offer vast potential for diverse applications. This work provides a comprehensive investigation of the electronic structure, transport and optical properties of MoSe2/ZrCl2 heterostructures using density functional theory (DFT) with non-equilibrium Green's function (NEGF) methods. Our results demonstrate that the electronic properties of MoSe2/ZrCl2 heterostructure materials can be precisely tuned by applying biaxial strain. Specifically, biaxial strain triggers a semiconductor-to-metal transition and modulates the bandgap from direct to indirect. In addition, we found that the MoSe2/ZrCl2 heterostructure exhibits remarkable optical properties with pronounced absorption peaks in the visible and near-ultraviolet regions. Photodetector simulations reveal substantial photocurrents in the visible range, particularly within the 1.6-3.6 eV photon energy regions, where distinct photocurrent peaks are observed. In addition, the MoSe2/ZrCl2 heterostructure-based device exhibits exceptional photodetector performance, with a current switching ratio reaching 108 at +6% biaxial strain. In summary, our study highlights the ability to finely tune the electronic and optical properties of MoSe2/ZrCl2 heterostructures through biaxial strain, offering promising prospects for the development of MoSe2/ZrCl2-based nano-switching and optoelectronic devices in practical applications.
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