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Achieving Large Valley Polarization in Altermagnet Semiconductor Mg(FeN)2 Monolayer
Qiqi Wang1, Li Deng1, Yanzhao Wu2
1Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
Inorganic Chemistry
|August 26, 2025
Summary
This study introduces Mg(FeN)2 as a novel altermagnet semiconductor for valleytronics. Combining electric fields and strain offers a powerful method to control valley polarization in these materials.
Area of Science:
- Condensed matter physics
- Materials science
- Spintronics
Background:
- Valley polarization in altermagnets is key for advancing valleytronics.
- Altermagnet semiconductors offer unique electronic properties.
- Controlling valley polarization is essential for device applications.
Purpose of the Study:
- To predict and characterize Mg(FeN)2 as a potential altermagnet semiconductor.
- To investigate methods for achieving and enhancing valley polarization in Mg(FeN)2.
- To explore the combined effect of electric fields and strain on valley polarization.
Main Methods:
- First-principles calculations to predict material properties.
- Analysis of electronic band structure to identify valleys.
- Simulations of electric field and strain effects on valley polarization.
Main Results:
- Mg(FeN)2 is predicted as an altermagnet semiconductor with in-plane magnetic anisotropy.
- Degenerate valleys in Mg(FeN)2 can be polarized and reversed using electric fields or strain.
- A combined electric field and strain approach significantly enhances valley polarization.
Conclusions:
- Mg(FeN)2 is a promising material for valleytronics applications.
- Coordinated electric field and strain control offers precise valley polarization.
- This strategy paves the way for novel valleytronics device designs.
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