Related Experiment Video
Updated: Sep 10, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect Transistors
Bin Lu1,2, Hua Qiang1, Dawei Wang1
1School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China.
Abstract:
In this paper, a novel Tunneling-Drift-Diffusion Field-Effect Transistor (TDDFET) based on the combination of the quantum tunneling and conventional drift-diffusion mechanisms is proposed for the design of ternary logic circuits. The working principle of the TDDFET is analyzed in detail. Then, the device is packaged as a "black box" based on the table lookup method and further embedded into the HSPICE platform using the Verilog-A language. The basic unit circuits, such as the Standard Ternary Inverter (STI), Negative Ternary Inverter (NTI), Positive Ternary Inverter (PTI), Ternary NAND gate (T-NAND), and Ternary NOR gate (T-NOR), are designed. In addition, based on the designed unit circuits, the combinational logic circuits, such as the Ternary Encoder (T-Encoder), Ternary Decoder (T-Decoder), and Ternary Half Adder (T-HA), and the sequential logic circuits, such as the Ternary D-Latch and edge-triggered Ternary D Flip-Flop (T-DFF), are built, which has important significance for the subsequent investigation of ternary logic circuits.
Related Concept Videos
Field Effect Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Bipolar Junction Transistor
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

