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Selective DUV Femtosecond Laser Annealing for Electrical Property Modulation in NMOS Inverter
Joo Hyun Jeong1, Won Woo Lee1, Sang Jik Kwon2
1Department of Semiconductor Engineering, Gachon University, Seongnam City 13120, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|August 27, 2025
Summary
Nitrogen-doped zinc oxynitride (ZnON) thin-film transistors (TFTs) offer an alternative to indium gallium zinc oxide (IGZO). Deep ultraviolet laser annealing enables rapid threshold voltage modulation for reliable electronic devices.
Area of Science:
- Materials Science
- Semiconductor Physics
- Device Engineering
Background:
- Amorphous indium gallium zinc oxide (a-IGZO) is a prevalent oxide semiconductor, but faces limitations like high processing temperatures and indium cost.
- Nitrogen-doped zinc oxynitride (ZnON) presents a promising alternative, processed at room temperature and offering reduced oxygen vacancies for improved performance and stability.
Purpose of the Study:
- To investigate the application of selective deep ultraviolet femtosecond (DUV fs) laser annealing for threshold voltage (Vth) modulation in ZnON thin-film transistors (TFTs).
- To evaluate the performance of Vth-modulated ZnON TFTs and demonstrate their suitability for electronic circuits.
Main Methods:
- Selective DUV fs laser annealing applied to the channel region of ZnON TFTs.
- Characterization of electrical properties, including threshold voltage modulation, of pristine and laser-annealed ZnON TFTs.
- Fabrication and testing of an NMOS inverter using Vth-modulated ZnON TFTs.
Main Results:
- Rapid Vth modulation achieved within microseconds using DUV fs laser annealing, without vacuum processing.
- ZnON TFTs exhibited enhanced field-effect mobility and stability compared to IGZO.
- Fabricated NMOS inverters demonstrated reliable performance, validating the potential of laser-annealed ZnON.
Conclusions:
- DUV fs laser annealing is an effective and rapid technique for modulating the electrical characteristics of ZnON TFTs.
- ZnON offers a viable, cost-effective, and stable alternative to a-IGZO for semiconductor applications.
- Laser annealing shows significant promise for fabricating various logic circuits and electronic devices.
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