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Mapping Delocalization of Impurity Bands across Archetypal Mott-Anderson Transition
M Parzer1, F Garmroudi2, A Riss1
1Technische Universität Wien, Institute of Solid State Physics, 1040 Vienna, Austria.
Abstract:
Tailoring charge transport in solids on demand is the overarching goal of condensed-matter research as it is crucial for electronic applications. Yet, often the proper tuning knob is missing and extrinsic factors such as impurities and disorder impede coherent conduction. Here, we control the very buildup of an electronic band from impurity states within the pseudogap of ternary Fe_{2-x}V_{1+x}Al Heusler compounds via reducing the Fe content. Our density-functional theory calculations combined with specific heat and electrical resistivity experiments reveal that, initially, these states are Anderson-localized at low V concentrations 0
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