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Related Concept Videos

Oscillations In An LC Circuit01:30

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Fabrication and Testing of Microfluidic Optomechanical Oscillators
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GaN HEMT Oscillators with Buffers.

Sheng-Lyang Jang1, Ching-Yen Huang1, Tzu Chin Yang1

  • 1Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan.

Micromachines
|August 28, 2025
PubMed
Summary

This study explores three Gallium Nitride High-Electron-Mobility Transistor (GaN-HEMT) oscillators, enhancing design for reliable, high-performance radio frequency circuits. Results show optimized structures improve efficiency and phase noise, crucial for advanced electronics.

Keywords:
GaN HEMT power oscillatorbufferfigure of meritleft-handed transmission linephase noisereliability

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Area of Science:

  • Materials Science and Engineering
  • Electrical Engineering
  • Semiconductor Device Physics

Background:

  • Gallium Nitride High-Electron-Mobility Transistors (GaN-HEMTs) offer superior switching speeds, high power density, and efficiency, making them ideal for power electronics and radio frequency (RF) applications.
  • However, GaN-HEMT devices face reliability challenges due to self-heating and substrate lattice mismatch, necessitating advanced circuit designs for long-term stability.
  • Depletion-mode GaN-HEMTs are particularly relevant for RF applications, driving the need for robust oscillator designs.

Purpose of the Study:

  • To investigate and enhance the design techniques for three types of wide-bandgap (WBG) GaN-HEMT fixed-frequency oscillators with integrated output buffers.
  • To evaluate the performance and reliability of these GaN-HEMT oscillators, focusing on phase noise, figure of merit (FOM), and operational stability under various conditions.
  • To provide insights for designing high-performance and reliable GaN-based RF circuits.

Main Methods:

  • Design and simulation of a single-ended GaN-on-SiC HEMT oscillator featuring an LC feedback network.
  • Development of a balanced oscillator incorporating a left-handed transmission-line LC network for differential signal generation.
  • Implementation of a cross-coupled GaN HEMT voltage-controlled oscillator (VCO) utilizing 8-shaped inductors for improved Q-factor and noise suppression.

Main Results:

  • The single-ended oscillator achieved 8.85 GHz with 2.4 dBm output power, -124.8 dBc/Hz phase noise at 1 MHz offset, and an FOM of -199.8 dBc/Hz. Hot-carrier stress testing indicated reliability benefits from operating the core at low supply and the buffer at high supply.
  • The balanced oscillator operated at 3.818 GHz, yielding -131.73 dBc/Hz phase noise at 1 MHz offset and an FOM of -188.4 dBc/Hz, with observed phase noise degradation at high supply voltages.
  • The cross-coupled VCO demonstrated an FOM of -190.09 dBc/Hz at 6.397 GHz, benefiting from drain inductors for Q-factor enhancement and 8-shaped inductors for noise suppression.

Conclusions:

  • The investigated GaN-HEMT oscillator designs demonstrate significant potential for high-performance RF applications.
  • Optimized circuit topologies, including the use of specific feedback networks and inductor designs, are crucial for achieving superior phase noise and FOM.
  • The study provides valuable design guidelines for enhancing the reliability and performance of GaN-based oscillators.