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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Unveiling Spin Selective Mechanism toward Very Large Spin Signals in Black Phosphorus 2D Semiconductor Spintronics
Marta Galbiati1,2, Simon M-M Dubois1,3, Hao Wei1
1Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
ACS Applied Materials & Interfaces
|August 28, 2025
Summary
Black phosphorus (BP) exhibits a novel spin transport mechanism, achieving high magnetoresistance for spintronic circuits. This versatile two-dimensional (2D) semiconductor shows promise for advanced spin-logic applications.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Developing efficient spintronic semiconductors for spin-logic circuits is challenging.
- Graphene offers 2D material advantages but lacks a tunable band gap.
- Black phosphorus (BP) is a 2D semiconductor with high carrier mobility and low spin-orbit coupling.
Purpose of the Study:
- Investigate the potential of black phosphorus (BP) for tunneling and spin injection.
- Unveil novel spin transport mechanisms in BP.
- Explore BP's capabilities beyond its role as a spin transport channel.
Main Methods:
- Experimental characterization of spin transport in BP-based spin valves.
- First-principles theoretical investigation of spin transport mechanisms.
- Analysis of magnetoresistance signals in BP.
Main Results:
- Discovery of a k-space spin-split transport mechanism in BP.
- Observation of high magnetoresistance spin signals up to 500% in BP spin valves.
- Demonstration of BP's potential for spin filtering.
Conclusions:
- Black phosphorus (BP) exhibits unique spin transport properties.
- BP demonstrates significant potential as a versatile platform for spintronics.
- BP could serve as both a spin transport channel and a spin valve barrier.
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