Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

567
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
567
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

478
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
478
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

505
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
505
Biasing of FET01:22

Biasing of FET

368
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
368
MOS Capacitor01:25

MOS Capacitor

958
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
958
MOSFET01:16

MOSFET

574
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
574

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Reduced-intensity conditioning therapy with fludarabine, idarubicin, busulfan and cytarabine for allogeneic hematopoietic stem cell transplantation in acute myeloid leukemia and myelodysplastic syndrome.

Leukemia research·2013
Same author

Effects of 3, 5, 3'-triiodothyronine (t3) and follicle stimulating hormone on apoptosis and proliferation of rat ovarian granulosa cells.

The Chinese journal of physiology·2013
Same author

Cardiogenic shock from acute ST-segment elevation myocardial infarction induced by severe multivessel coronary vasospasm.

European heart journal·2013
Same author

[Comparative study on effects of electroacupuncture stimulation of Shenmen (HT 7) and Taiyuan (LU 9) on P 300 of event-related potentials and brain electrical activity mapping in healthy young adults].

Zhen ci yan jiu = Acupuncture research·2013
Same author

MiR-215 modulates gastric cancer cell proliferation by targeting RB1.

Cancer letters·2013
Same author

Low glucose utilization and neurodegenerative changes caused by sodium fluoride exposure in rat's developmental brain.

Neuromolecular medicine·2013

Related Experiment Video

Updated: Sep 9, 2025

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

796

Recent advances in heterostructure-based organic field-effect transistor memory.

Wengting Zhang1, Shuang Li1, Cheng Zhang1

  • 1School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China. zwt13104@mail.lzjtu.cn.

Nanoscale
|August 29, 2025
PubMed
Summary
This summary is machine-generated.

Heterojunction organic field-effect transistor memory (OFETM) offers superior data storage with high performance and long retention. Enhancing stability in these OFETM devices is crucial for practical applications in electronics and computing.

More Related Videos

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.1K

Related Experiment Videos

Last Updated: Sep 9, 2025

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

796
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.1K

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Heterojunction structures offer enhanced properties over single-layer films in memory devices.
  • Organic field-effect transistor memory (OFETM) utilizing heterojunctions is a promising data storage technology.
  • Applications span sensory devices, data storage, and neuromorphic computing.

Purpose of the Study:

  • To review the research on OFETMs based on organic heterojunctions.
  • To emphasize the fundamental physical mechanisms and key performance parameters.
  • To highlight the potential and challenges of these devices.

Main Methods:

  • Discussion of various heterostructure types: organic-inorganic, inorganic-inorganic, and organic-organic.
  • Analysis of performance metrics including memory window, current on/off ratio, retention, programming/erasing speeds, and operating voltage.
  • Focus on stability challenges and ongoing research to improve device reliability.

Main Results:

  • Heterostructure-based OFETMs demonstrate significant potential with memory windows up to 90 V and retention exceeding 10 years.
  • Devices achieve high current on/off ratios (10^7) and rapid speeds (1 μs).
  • Low operating voltages (below 10 V) are achievable.

Conclusions:

  • Heterojunction OFETMs exhibit exceptional capabilities for advanced data storage.
  • Stability remains a critical challenge impacting practical implementation.
  • Diverse heterostructures show promise for future electronic and computing applications.