Recent advances in heterostructure-based organic field-effect transistor memory

With ongoing advancements, heterojunction structures have been widely adopted in the memory domain, delivering enhanced performance and superior properties beyond those offered by single-layer thin films. In particular, among various organic field-effect transistor memory (OFETM) technologies, heterojunction-based OFETMs have emerged as one of the most promising data storage technologies, with applications ranging from sensory and storage devices to neuromorphic computing. Heterostructure-based OFETMs can achieve a memory window of up to 90 V, a high current on/off ratio of 10⁷, and retention characteristics exceeding 10 years. Furthermore, these devices exhibit rapid programming/erasing speeds in the millisecond to microsecond range (e.g., as fast as 1 μs) and can operate at low voltages (typically below 10 V). However, heterostructure-based OFETMs face significant stability challenges that critically impact their performance and practical use. Given that stability is a key performance metric for OFETMs, researchers are actively working to enhance the reliability of heterojunction-based memory devices. Consequently, a diverse range of heterostructures has been developed-including organic-inorganic heterostructures, inorganic-inorganic hybrids, and organic-organic heterostructures-each demonstrating significant potential across various applications. This review discusses the research process of OFETMs utilizing organic heterojunctions, emphasizing the fundamental physical mechanisms and key performance parameters that contribute to their exceptional capabilities.