Related Experiment Video
Updated: Sep 9, 2025

A Method for Growing Bio-memristors from Slime Mold
Published on: November 2, 2017
Negative differential resistance in memristive systems: historical evolution, mechanisms and neuromorphic
Hongyi Lu1, Shiyu Xie1, Weijian Zhang1
1College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China. qbx20230089@yjs.fjnu.edu.cn.
Abstract:
The synergy between the memristive effect and negative differential resistance (NDR) offers promising prospects for advancing electronic devices and circuits. Predictable outcomes include the development of devices with improved performance and functionality that are applicable across a wide range of fields, from computing architecture to neuromorphic engineering. Despite the growing body of literature exploring this convergence, the effective implementation of the NDR effect in memristors faces many challenges. Several memristive materials-including VO2, TaOx, and chalcogenides-have demonstrated promising NDR effects. Among them, niobium oxide uniquely combines steep (<3 ns), endurable (>1012 cycles) negative differential resistance with biophysically plausible spiking dynamics-enabled by its dual current-controlled and thermally driven mechanisms-making it ideal for energy-efficient neuromorphic primitives. This paper reviews the complex phenomenon of NDR and its applications in niobium oxide memristors while analyzing its potential future applications in electronic systems. By outlining the NDR effect and its applications in niobium oxide memristors, this paper aims to provide valuable insights for researchers in the field.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

