Compact modeling of 2D nanotransistors: materials characteristics, device structures, and analytical techniques

This review addresses the compact modeling strategies for field-effect transistors (FETs) based on two-dimensional materials (2D-FETs), which offer excellent electrostatic control and strong scaling potential thanks to their atomically thin channels. Achieving the integration of 2D-FETs into high-density circuits demands accurate compact models, beyond those established for silicon MOSFETs. We discuss the characteristics of the main 2D material suitable for nanoelectronics and examine the main modeling approaches and challenges, with a focus on top-gated devices and transport regimes spanning from diffusive to ballistic. Special attention is given to non-idealities such as short-channel effects, interface traps, and non-ohmic heterodimensional (3D-2D) contacts. Finally, we offer perspectives on the future application of 2D semiconductors in nanoelectronics.