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Updated: Sep 9, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
ZnO Quantum Dots@CsPbBr3 Poly-Heterocrystalline Film Enables High-Performance Floating-Gate Transistor Arrays for
Jiajun Xu1,2, Bo Tong1,2, Nian Dai1,2
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
Abstract:
Nonvolatile optoelectronic synapses motivated by the human eye can effectively function as convolutional kernels to preprocess images, demonstrating significant promise for edge computing. Among the optoelectronic synapses, the floating-gate photosensitive transistor (FG-PT) is particularly noteworthy due to its rapid response speed and excellent retention. Although some FG-PTs are reported, they still suffer from high operating voltages, low conductance ratios, and difficulties in array preparation. Here, a ZnO QDs@CsPbBr3 poly-heterocrystalline (PHC) film to serve as the floating gate layer of FG-PT is synthesized. The PHC film combines the desirable properties of each phase, exhibiting both high electrical conductivity and excellent photoelectric properties. The high electrical conductivity allows FG-PT to store a large amount of charge at a low voltage (1 V). While the excellent photoelectric properties facilitate the gradual erasure of these charges under light pulses, resulting in a large conductance ratio (≈3.57×105). Moreover, the excellent film-forming properties of the PHC film enable the fabrication of an FG-PT array comprising 25,600 devices on 1 cm2 substrate. Using the FG-PT array to preprocess images achieves a significantly higher recognition precision at the fifth epoch (87.64%) than that of the original images (58.08%) and CMOS-processed images (77.68%), indicating great potential for edge computing.

