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Non-volatile resistive switching characteristics in Cu2-xS-based memristor.
Seungsub Lee1, Junsung Byeon1, Sohyeon Park2
1Department of Physics, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea. chasn@skku.edu.
Nanoscale
|September 2, 2025
Summary
Copper sulfide (Cu2-xS) memristors offer a low-power, high-density solution for memory and computing. Fabricated at room temperature, these devices enable efficient, scalable next-generation electronic systems.
Area of Science:
- Materials Science
- Electronics Engineering
- Nanotechnology
Background:
- Memristors are key for non-volatile memory and neuromorphic computing.
- Conventional memristors face challenges in energy efficiency and flexible substrate integration due to fabrication energy and high operating voltages.
Purpose of the Study:
- To demonstrate a novel memristive switching device using copper sulfide (Cu2-xS).
- To investigate the potential of Cu2-xS for scalable and energy-efficient electronic applications.
Main Methods:
- Fabrication of Cu2-xS memristive devices via a room-temperature sulfurization synthesis process.
- Characterization of resistive switching behavior, including ON/OFF current ratio, set voltage, and retention time.
Main Results:
- The Cu2-xS device exhibited stable and reproducible resistive switching, driven by localized phase transitions.
- Achieved a high ON/OFF current ratio (>10^4), low set voltage (~0.5 V), and retention exceeding 1400 seconds.
- Demonstrated reliable non-volatile memory performance.
Conclusions:
- Copper sulfide (Cu2-xS) is a promising material for next-generation memory arrays and neuromorphic computing.
- The room-temperature fabrication process makes Cu2-xS scalable and integration-friendly for flexible electronics.
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