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Related Experiment Video

Updated: May 13, 2026

Implementation of a Reference Interferometer for Nanodetection

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Published on: April 26, 2014

Structure-in-Void Quasi-Bound State in the Continuum Metasurface for Deeply Subwavelength Nanostructure Metrology.

Falco Bijloo^1,2, Arie J den Boef^1,3,4, Peter M Kraus^1,3

¹Advanced Research Center for Nanolithography, Science Park 106, 1098 XG Amsterdam, The Netherlands.

|September 2, 2025

Summary

Dielectric metasurfaces enable precise measurement of subwavelength features using Fano lineshapes. This optical method offers high resolution for semiconductor critical dimension metrology.

Keywords:

Fano resonance effective index metasurface metrology nanophotonics quasi-BIC sensor

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Area of Science:

Optics and Photonics
Metamaterials
Nanotechnology

Background:

Dielectric metasurfaces exhibit Fano lineshapes sensitive to geometrical changes.
Quasi bound-state-in-the-continuum resonances are key to this sensitivity.

Purpose of the Study:

To develop an optical approach for measuring deep subwavelength feature sizes.
To assess the potential of dielectric metasurfaces for semiconductor critical dimension metrology.

Main Methods:

Simulating and experimentally analyzing dielectric disk-hole metasurfaces with varying void infillings.
Utilizing Fano lineshape shifts to infer changes in feature dimensions.
Characterizing the metasurface as an effective index sensor.

Main Results:

A sensitivity of 40.5 nm resonant wavelength shift per 1 nm critical dimension change was achieved.
The optical linewidth was 1.8 nm.
The metasurface demonstrated a sensing sensitivity of 262 nm·RIU⁻¹ and a figure of merit of 146 RIU⁻¹.

Conclusions:

Metasurface-based Fano resonances provide a high-resolution optical method for subwavelength metrology.
This technique offers a high-throughput alternative to scanning electron microscopy for critical dimension measurements in semiconductor manufacturing.