High-Performance Micro-LED Displays via Etching-Damage-Free Pixelation Strategy for Multifunctional Integrated...

Area of Science:

• Optoelectronics
• Materials Science
• Semiconductor Devices

Background:

• Micro-LEDs face efficiency drops at smaller sizes due to sidewall damage from plasma etching.
• Current methods focus on low current density efficiency, limiting high-brightness applications.

Purpose of the Study:

• To introduce and evaluate a precision-selective ion implantation (PSII) strategy for boosting Micro-LED performance.
• To enhance external quantum efficiency (EQE) and brightness at high current densities.
• To explore PSII's suitability for advanced applications like augmented reality (AR) and optical communication.

Main Methods:

• Systematic evaluation of PSII on electrical isolation and photoelectric properties.
• Fabrication of Micro/Nano-LED arrays using PSII.
• Testing of devices in AR displays, optical communication systems, and UV photodetectors (PDs).

Main Results:

• Achieved Micro/Nano-LED arrays with pixel densities up to 25,400 ppi.
• Reduced turn-off leakage current and improved carrier injection efficiency.
• Increased EQE by ≈30% and brightness by ≈25% at 10,000 A cm⁻².
• Enhanced UV/blue light absorption for photodetectors.
• Achieved 131.2 MHz modulation bandwidth (30% improvement) and ≈90% PD photocurrent increase.

Conclusions:

• PSII is an effective strategy for high-brightness Micro-LEDs, outperforming traditional etching.
• The technology enables multifunctional integrated optoelectronic devices.
• PSII offers a robust alternative for advanced Micro-LED applications and photodetectors.