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Updated: Jun 9, 2026

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
Published on: July 8, 2016
A monolithically integrated near-infrared imager with crystallization- and oxidation-modulated tin-lead perovskites
Zhichun Yang1,2, Jingjing Liu3,4, Haotian Bao3,4
1State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Laser Spectroscopy, Shanxi University, 030006, Taiyuan, China. yangzhichun@sxu.edu.cn.
Abstract:
The fast crystallization and facile oxidation of Sn2+ of tin-lead (Sn-Pb) perovskites are the biggest challenges for their applications in high-performance near-infrared (NIR) photodetectors and imagers. Here, we introduce a multifunctional diphenyl sulfoxide (DPSO) molecule into perovskite precursor ink to response these issues by revealing its strong binding interactions with the precursor species. The regulated perovskite film exhibits a dense morphology, reduced defect density and prolonged carrier diffusion length. The manufactured self-powered photodetector realizes a spectral response of 300-1100 nm, dark current density of 4.7 × 10-8 mA cm-2, peak responsivity of 0.49 A W-1 and specific detectivity of 1.20 × 1012 Jones in NIR region (780-1100 nm), -3 dB bandwidth of 11.4 MHz, linear dynamic range of 174 dB, and ultrafast rise/fall time of 14.2/17.1 ns, respectively. We demonstrate a 64 × 64 NIR imager with an impressive spatial resolution of 1.32 lp mm-1 by monolithically integrating the photodetector with a commercial thin-film transistor readout circuit.

