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Tuning Interfacial Thermal Transport through Phase Engineering in 2D Ferroelectrics.

Hui Guo1, Yu Yang1, Zehao Yu1

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Small (Weinheim an Der Bergstrasse, Germany)
|September 5, 2025
PubMed
Summary
This summary is machine-generated.

This study reveals that low-temperature phase transitions in Indium Selenide (In2Se3) significantly alter its thermal transport properties. This finding is crucial for developing advanced data storage technologies that require precise thermal management.

Keywords:
2D ferroelectricsinterfacial thermal resistancephase transitionsphonon transportα‐In2Se3

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) Indium Selenide (In2Se3) possesses unique ferroelectric properties, making it promising for information memory and data storage.
  • In2Se3 exhibits a complex phase diagram sensitive to temperature and pressure, leading to varied lattice structures.
  • The influence of In2Se3 phase transitions on phonon transport is not well understood.

Purpose of the Study:

  • To investigate interfacial thermal transport in few-layer alpha-Indium Selenide (α-In2Se3).
  • To explore the impact of temperature-induced phase transitions on the thermal and electrical properties of α-In2Se3.
  • To establish a link between ferroelectric phase transitions and thermal management in 2D materials.

Main Methods:

  • Mechanical exfoliation of few-layer α-In2Se3.
  • Raman spectroscopy to analyze lattice vibrations and phase changes.
  • Electrical property measurements to track resistance variations.
  • The 3ω method to quantify interfacial thermal resistance.

Main Results:

  • A significant shift in Raman peaks and electrical resistance (two orders of magnitude) was observed around 65 K.
  • Interfacial thermal resistance exhibited notable variations near 65 K, correlating with a low-temperature phase transition.
  • High-temperature phase transitions (around 500 K) showed minimal impact on thermal transport compared to low-temperature transitions.

Conclusions:

  • Low-temperature phase transitions in α-In2Se3, driven by lattice distortion, significantly affect interfacial thermal resistance.
  • The ability to tune thermal transport via phase transitions in 2D ferroelectrics like In2Se3 offers potential solutions for thermal management in data storage.
  • Further research into ferroelectric phase transitions can unlock new avenues for advanced electronic device design.