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Updated: Sep 8, 2025

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Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
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Unveiling NiOx/Perovskite Interfaces: Charge Transport and Device Performance in Perovskite Solar Cells
Hanseul Lee1,2, Hye Ri Jung1, Sooyeon Pak3,4
1Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
ACS Applied Materials & Interfaces
|September 6, 2025
Summary
Fabrication methods for nickel oxide (NiOx) significantly impact perovskite solar cell performance. Nanoparticle precursor NiOx enhances hole extraction and device efficiency by minimizing interfacial charge depletion.
Area of Science:
- Materials Science
- Solid-State Physics
- Renewable Energy
Background:
- Nickel oxide (NiOx) is a crucial p-type semiconductor for hole transport layers (HTLs) in perovskite solar cells (PSCs).
- Understanding the influence of fabrication methods on NiOx interfacial properties is vital for optimizing PSC performance.
- Interfacial space charge effects significantly impact charge dynamics in heterojunction devices.
Purpose of the Study:
- To investigate the impact of nanoparticle precursor (NP) and sputtering deposition (SP) fabrication methods on NiOx interfacial properties.
- To elucidate the role of interfacial space charge effects in NiOx/perovskite systems.
- To correlate fabrication-induced interfacial characteristics with charge transport and overall device performance.
Main Methods:
- Comparative analysis of NP NiOx and SP NiOx thin films.
- Characterization of Ni3+/Ni2+ ratios and conductivity.
- Investigation of interfacial band bending and hole depletion using electrochemical techniques.
- Performance evaluation of perovskite solar cells incorporating different NiOx HTLs.
Main Results:
- SP NiOx showed a higher Ni3+/Ni2+ ratio and conductivity but induced significant hole depletion and band bending.
- NP NiOx exhibited weaker hole depletion and a negligible hole barrier, enhancing hole extraction.
- The presence of carbon ligands in NP NiOx mitigated interfacial recombination, leading to improved device efficiency.
- NP NiOx-based PSCs achieved higher open-circuit voltage and overall efficiency compared to SP NiOx-based devices.
Conclusions:
- The fabrication method critically determines the interfacial properties of NiOx HTLs in PSCs.
- Minimizing interfacial hole depletion and recombination is key to enhancing PSC performance.
- NP NiOx, due to its favorable interfacial characteristics, offers a promising route for efficient HTL design in perovskite solar cells.
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