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Updated: Jan 18, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
A CuBi2O4/TiO2 p-n Heterojunction for Enhancing the Barrier Protection of a Nickel-Based Layer on the Magnesium Alloy
Yu Wen1, Yanghua Teng1, Yue Liu1,2
1Precise Synthesis and Function Development Key Laboratory of Sichuan Province, College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637002, PR China.
Abstract:
Herein, CuBi2O4 microspheres were first deposited on TiO2 nanotube arrays to develop a p-n CuBi2O4/TiO2 heterojunction by a facile hydrothermal protocol. The variations in the photoinduced open-circuit potential, photocurrent, and electrochemical parameters of the nickel-plated magnesium alloy (Mg/Ni) demonstrated the remarkably strengthened photoelectrochemical efficiency and photocathodic protection (PCP) capability caused by the CuBi2O4 modification. This enhancement is attributed to establishing a built-in electric field and intensified light absorption in a broadened wavelength spectrum, confirmed by the valence band XPS and ultraviolet-visible spectra. The as-prepared photoanode showed an unprecedentedly high photocurrent density compared with that of current heterojunctions based on CuBi2O4 and TiO2 semiconductors. The heterojunction continuously provided PCP to the Mg/Ni couple and suppressed the galvanic corrosion between the Mg and nickel-phosphorus alloy. This study proposed a new strategy for constructing a heterojunction with a novel morphology and considerably enhanced photoelectrochemical performance.
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Schottky Barrier Diode