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A diffractive element-based chromatic confocal thickness measurement device and thickness correction method.

Zhisong Li1, Zhenwei Zhang1, Keke Liu2

  • 1The Unit of College of Machine, Shanghai Dianji University, Shanghai, China.

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Summary
This summary is machine-generated.

This study presents an enhanced dual-probe chromatic confocal system for precise wafer thickness measurement. A novel tilt correction algorithm significantly improves accuracy by compensating for measurement errors in semiconductor manufacturing.

Keywords:
Physicsengineeringoptics

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Area of Science:

  • Semiconductor Manufacturing
  • Optical Metrology
  • Precision Engineering

Background:

  • Wafer thickness is critical for semiconductor production costs and chip performance.
  • Traditional thickness measurement methods suffer from errors caused by clamping instability and uneven positioning.
  • Existing systems lack robust mechanisms for real-time tilt compensation.

Purpose of the Study:

  • To enhance a dual-probe chromatic confocal system for accurate wafer thickness measurement.
  • To develop and validate a tilt correction algorithm for improving measurement precision.
  • To address the limitations of conventional wafer thickness gauging techniques.

Main Methods:

  • Integration of a diffractive optical element to split white light into three beams.
  • Utilizing spectrometer wave peak counts for detecting wafer tilt.
  • Development and experimental testing of a tilt correction algorithm.

Main Results:

  • A tilt correction algorithm was developed and tested on the enhanced dual-probe chromatic confocal system.
  • Experiments demonstrated that tilt significantly impacts thickness measurements (0.52 μm error with 10 μm offset and 3° tilt).
  • The developed algorithm achieved a 50.2% improvement in thickness measurement accuracy by reducing tilt errors.

Conclusions:

  • The enhanced dual-probe chromatic confocal system with tilt correction offers a more precise and reliable method for wafer thickness measurement.
  • This advancement is crucial for optimizing semiconductor manufacturing processes and improving yield.
  • The study overcomes limitations of traditional methods, paving the way for improved quality control in microelectronics fabrication.