Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Peripheral and central vestibular neuromodulation improve postural control in adolescent idiopathic scoliosis: a randomized, sham-controlled, multi-arm intervention study.

Journal of neuroengineering and rehabilitation·2026
Same author

Resistance monitoring and putative biochemical mechanisms of Spodoptera frugiperda to different insecticides in China.

Pest management science·2026
Same author

Mechanistic insights into activation of bacterial Retron-Eco8 immunity by phage protein SSB.

Nature communications·2026
Same author

Enhanced Anti-Lung Cancer Efficacy of Neo-BCV Combined with Cisplatin: Immune Activation and Tumor Microenvironment Remodeling.

Vaccines·2026
Same author

A Chitosan-Dextran Hydrogel Based on a Site-Isolated Grafting Strategy for Long-Term Wet Tissue Adhesion and Wound Healing.

Advanced healthcare materials·2026
Same author

An improved watershed-based algorithm for ore image segmentation.

Scientific reports·2026

Related Experiment Video

Updated: Jan 18, 2026

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
09:18

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

Published on: February 8, 2022

4.5K

Direct Etching Silicon Carbide Via Electro-Enhanced Catalytic Reactions.

Qi Sun1, Sidong Wu1, Bingchun Jia1

  • 1State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou, Zhejiang 310058, China.

ACS Applied Materials & Interfaces
|September 8, 2025
PubMed
Summary

This study introduces an electro-enhanced catalytic etching method for precise atomic-level patterning of silicon carbide (SiC) surfaces. This safe, ambient-condition process avoids hazardous chemicals and preserves crystallographic integrity.

Keywords:
atomic-level patterningelectro-enhanced catalytic etchingelectron transferscanning probe lithographysilicon carbide

More Related Videos

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
08:02

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

9.4K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.7K

Related Experiment Videos

Last Updated: Jan 18, 2026

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
09:18

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

Published on: February 8, 2022

4.5K
Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
08:02

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

9.4K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.7K

Area of Science:

  • Materials Science
  • Surface Science
  • Nanotechnology

Background:

  • Precise atomic-level patterning is crucial for advanced semiconductor devices.
  • Traditional etching methods often involve hazardous chemicals and can cause subsurface damage.
  • Silicon carbide (SiC) is a key material for high-power electronics and optoelectronics.

Purpose of the Study:

  • To develop a novel, safe, and efficient method for atomic-level patterning of single-crystal 4H-SiC (0001) surfaces.
  • To investigate the mechanism of electro-enhanced catalytic etching.
  • To assess the quality of the etched surfaces and potential for broader application.

Main Methods:

  • Utilizing platinum-coated probes with a negative sample bias to induce electro-enhanced catalytic etching.
  • Performing etching under ambient conditions without mechanical load.
  • Analyzing etched surfaces using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM).

Main Results:

  • Achieved direct atomic-level patterning of 4H-SiC (0001) surfaces.
  • Demonstrated enhanced catalytic etching of SiC via electro-chemical stimulation.
  • Confirmed perfect crystallographic order and absence of subsurface damage in etched regions via HAADF-STEM.
  • Operated process under safe, ambient conditions, avoiding hazardous chemicals like hydrofluoric acid.

Conclusions:

  • The electro-enhanced catalytic etching approach offers a safe and effective alternative for SiC surface patterning.
  • The method preserves atomic-level crystallographic integrity, crucial for device performance.
  • This technique shows potential for fabricating other semiconductor materials, advancing microelectronics and quantum technologies.