UVA/B-Selective Skin-Inspired Nociceptors Based on Green Double Perovskite QDs-Sensitized 2D Semiconductor toward...

Achieving UVA/B-selective, skin-inspired nociceptors with perception and blockade functions at the single-unit device level remains challenging. This is because the device necessitates distinct components for every performance metric, thereby leading to complex preparation processes and restricted performance, as well as the absence of deep UV (UVB and below)-selective semiconductors. Here, to address this, we develop a structure-simplification skin-inspired nociceptor using a reverse type-II Cu₂AgSbI₆/MoS₂ heterostructure. It integrates excellent UVA/B sensitization gain in Cu₂AgSbI₆, surpassing traditional Cu₂AgM^IIII₆-based QDs in delocalization and bond energy, and exhibits efficient multifield modulated charge self-trapping transport. Consequently, the hybrid phototransistor shows significant increases in detectivity (30/14 times) and photoresponsivity (6.4/7.2 times) under 365/280 nm UV illumination. Moreover, it can reliably mimic computational capabilities with unusual adaptivity for skin-inspired nociceptor functions, achieving an unusual neural blocking degree of approximately 52%. This work presents a new approach for designing complex bionic functions in 2D materials for advanced neuromorphic photoelectronics.