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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
Published on: December 16, 2011
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Amorphous silicon resistors enable smaller pixels in photovoltaic retinal prosthesis
Andrew Shin1, Nathan Jensen2, Emma Butt3
1Department of Materials Science and Engineering, Stanford University, Stanford, CA, United States of America.
Journal of Neural Engineering
|September 9, 2025
Summary
Researchers developed novel shunt resistors using doped amorphous silicon (a-Si) for smaller photovoltaic pixels in retinal implants. This innovation improves prosthetic vision acuity by enhancing contrast and discharge times without compromising performance.
Area of Science:
- Biomedical Engineering
- Materials Science
- Ophthalmology
Background:
- The PRIMA subretinal prosthesis demonstrated feasibility for prosthetic central vision.
- Improving prosthetic visual acuity requires decreasing pixel size below 100µm.
- Standard resistor materials are incompatible with small photovoltaic pixels, hindering miniaturization.
Purpose of the Study:
- To develop and integrate novel shunt resistors into photovoltaic arrays for smaller pixel sizes.
- To evaluate the impact of these shunt resistors on electrode discharge time and electric field contrast.
- To assess the compatibility of the fabrication process with existing photovoltaic array manufacturing.
Main Methods:
- Fabricated miniature shunt resistors using doped amorphous silicon (a-Si) with controlled resistivity (Ω*cm).
- Deposited a-Si via low-pressure chemical vapor deposition and encapsulated resistors with SiO2 and SiC for in-vivo stability.
- Integrated resistors into photovoltaic arrays with pixel sizes down to 20µm and tested photoresponsivity and discharge characteristics.
Main Results:
- Successfully fabricated high-resolution retinal implants with integrated shunt resistors (0.75–4 MΩ) in pixels as small as 20µm.
- Maintained high photoresponsivity (0.53 A/W) comparable to arrays without shunts.
- Shunt resistors significantly reduced electrode discharge time and increased spatial contrast (Landolt C pattern) at video frame rates.
Conclusions:
- Doped a-Si enables fabrication of miniature MΩ shunt resistors compatible with photovoltaic array manufacturing.
- Integrated shunt resistors enhance current injection and spatial contrast, crucial for improving visual acuity in prosthetic vision.
- These advancements are critical for scaling down pixel sizes below 100µm for next-generation retinal implants.
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