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Updated: Jan 18, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Van der Waals Epitaxy of CsPbI3/MoS2 Heterojunction Phototransistors for Neuromorphic Computing
Rong Lu1,2, Chang Lu1, Yanran Li1,2
1Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha, Hunan 410083, China.
Abstract:
The optoelectronic properties of perovskite/two-dimensional (2D) material van der Waals heterojunctions provide greater potential for innovative neuromorphic devices. However, the traditional growth of heterojunctions still relies on strict lattice matching and high-temperature processes, which hinder high-quality interface construction and efficient carrier transport. Here, the 2D CsPbI3/MoS2 heterojunction is realized via the van der Waals epitaxy process, overcoming lattice matching limitations. Based on this, a novel neuromorphic 2D/2D CsPbI3/MoS2 heterojunction phototransistor is demonstrated. Its superiority lies in the high-quality stacked heterojunction structure constructed by the van der Waals epitaxy process, which promotes the effective separation of photogenerated carriers. More importantly, the different spiking Boolean logics and Hebbian synaptic learning rules can be modulated by the photoelectrically synergistic strategy. These results indicate that they can not only facilitate neuromorphic electronics but also enable light-tuned spatiotemporal logic dynamics.
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