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Updated: Jan 18, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Planar Optical Antenna-Driven Brightness Enhancement of Interface-Confined Hexagonal Boron Nitride Single-Photon
Guangsheng Jiang1, Xueyong Yuan1, Chuanlin Liu1
1School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education, Southeast University, Nanjing 211189, P. R. China.
Abstract:
While hexagonal boron nitride (hBN) hosts promising room-temperature quantum emitters for hybrid quantum photonic circuits, scalable deterministic integration and insufficient brightness alongside low photon collection and coupling efficiencies remain unresolved challenges. We present a femtosecond laser nanoengineering platform that enables the site-specific generation of hBN single-photon source (SPS) arrays. First-principles density functional theory (DFT) calculations and polarization-resolved spectroscopy confirm the atomic origin of emission as interfacial defects at hBN/SiO2 heterojunctions. To transcend the intrinsic limitations of dielectric confinement, we introduce a chip-compatible hybrid optical antenna architecture that synergistically combines Purcell-enhanced spontaneous emission with directional far-field collimation. This photonic engineering strategy achieves a 5-fold brightness enhancement while elevating the single-photon saturation count rate from 0.47 Mcounts/s on bare SiO2/Si substrates to 3.08 Mcounts/s, maintaining exceptional single-photon purity (g(2)(0) = 0.14 ± 0.07) and polarization contrast (>90%). The demonstrated integration of deterministic emitter generation with planar quantum nano-optics offers a universal approach to engineering quantum light-matter interactions in van der Waals heterostructures, enabling scalable quantum networks and hybrid two-dimensional (2D) material-based photonic integrated circuits.
