Near-infrared artificial synapse based on a pristine InGaAs nanowire synaptic transistor

Area of Science:

• Materials Science
• Neuroscience
• Electrical Engineering

Background:

• Advancements in artificial intelligence (AI) necessitate efficient artificial synaptic devices.
• Existing artificial synapses often face limitations in power consumption and speed.

Purpose of the Study:

• To develop a low-power, high-speed artificial synaptic device using pristine indium gallium arsenide nanowires (InGaAs NWs).
• To explore the potential of InGaAs NWs in optoelectronic artificial synapses for AI and neuromorphic computing.

Main Methods:

• Fabrication of an artificial synaptic device based on pristine InGaAs NWs.
• Implementation of paired-pulse facilitation and postsynaptic current (PSC) memory storage behavior.
• Utilizing near-infrared (NIR) light (1064 nm) and varying voltage pulses to induce synaptic plasticity.
• Investigating the transition from short-term to long-term memory through pulse duration modulation.

Main Results:

• Achieved a paired-pulse facilitation of up to 119%.
• Demonstrated memory storage behavior with postsynaptic current (PSC) modulation under NIR illumination.
• Observed a 42% enhancement in excitatory PSC by increasing pulse stimulation voltage.
• Successfully realized the transition from short-term to long-term memory, mimicking biological synapses.

Conclusions:

• Pristine InGaAs NWs are suitable for sensitive optoelectronic artificial synapses.
• The developed device exhibits complex synaptic behaviors, including memory transitions.
• This research provides a facile approach for developing low-dimensional nanomaterial-based synapses for AI and neuromorphic computing.