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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Indium tin oxide (Sn/In2O3) nanocrystals (NCs) exhibit localized surface plasmon resonance (LSPR) in the short-wavelength infrared spectrum.
  • Doped semiconductor NCs offer tunable LSPR, an alternative to metallic plasmonics, via dopant control and electrochemical modulation.
  • The influence of dopant precursor oxidation states on carrier density and LSPR stability in NCs requires further investigation.

Purpose of the Study:

  • To investigate the effect of tin (Sn) dopant precursor oxidation states (Sn(IV) vs. Sn(II)) on the carrier density and LSPR properties of indium tin oxide nanocrystals.
  • To evaluate the robustness and surface oxidation stability of these NCs after exposure to extreme shock environments.
  • To explore the potential of these NCs in silicon-on-glass devices for multilevel cell (MLC) operation through electrochemical modulation of LSPR.

Main Methods:

  • Synthesis of indium tin oxide nanocrystals using different Sn precursor oxidation states.
  • Characterization of carrier density and LSPR peak positions.
  • Exposure of NC-coated substrates to multicycle supersonic shockwaves (Mach 1.7, 2 MPa, 864 K).
  • Fabrication of post-shock NCs into silicon-on-glass devices for LSPR modulation (2 V to -2 V).

Main Results:

  • Dopant oxidation valency was conserved, with similar carrier densities (approx. 1.04-1.05 × 10^20 cm^-3) and LSPR peaks (4826-4854 cm^-1) observed for both Sn(IV) and Sn(II) precursors.
  • Indium tin oxide NCs demonstrated robustness and surface oxidation stability after extreme shock environment exposure.
  • Electrochemical modulation of LSPR in fabricated devices revealed MLC states, with more apparent operation in Sn(II) precursor NCs due to delayed Sn(IV) incorporation.

Conclusions:

  • The Sn(II) precursor leads to more effective MLC operation in indium tin oxide NC-based devices, attributed to delayed aliovalent substitutional doping.
  • Indium tin oxide nanocrystals exhibit robust performance and stability under extreme conditions, suitable for harsh environment applications.
  • The study highlights the critical role of dopant precursor chemistry in tailoring semiconductor nanocrystal properties for advanced optoelectronic functionalities.