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Valency-Conserved Doping in Infrared Plasmonic Nanocrystals for Supersonic Shock-Resistant Multi-Level Cell
Do Yoon Park1, Ju Hyeon Kang1, Sivaprakash Paramasivam2
1Department of Chemical Engineering, Keimyung University, Daegu 42601, Republic of Korea.
ACS Applied Materials & Interfaces
|September 11, 2025
Summary
Indium tin oxide nanocrystals offer tunable infrared light interactions. Their stability and multilevel cell operation are enhanced using specific tin precursor oxidation states, showing promise for advanced electronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Indium tin oxide (Sn/In2O3) nanocrystals (NCs) exhibit localized surface plasmon resonance (LSPR) in the short-wavelength infrared spectrum.
- Doped semiconductor NCs offer tunable LSPR, an alternative to metallic plasmonics, via dopant control and electrochemical modulation.
- The influence of dopant precursor oxidation states on carrier density and LSPR stability in NCs requires further investigation.
Purpose of the Study:
- To investigate the effect of tin (Sn) dopant precursor oxidation states (Sn(IV) vs. Sn(II)) on the carrier density and LSPR properties of indium tin oxide nanocrystals.
- To evaluate the robustness and surface oxidation stability of these NCs after exposure to extreme shock environments.
- To explore the potential of these NCs in silicon-on-glass devices for multilevel cell (MLC) operation through electrochemical modulation of LSPR.
Main Methods:
- Synthesis of indium tin oxide nanocrystals using different Sn precursor oxidation states.
- Characterization of carrier density and LSPR peak positions.
- Exposure of NC-coated substrates to multicycle supersonic shockwaves (Mach 1.7, 2 MPa, 864 K).
- Fabrication of post-shock NCs into silicon-on-glass devices for LSPR modulation (2 V to -2 V).
Main Results:
- Dopant oxidation valency was conserved, with similar carrier densities (approx. 1.04-1.05 × 10^20 cm^-3) and LSPR peaks (4826-4854 cm^-1) observed for both Sn(IV) and Sn(II) precursors.
- Indium tin oxide NCs demonstrated robustness and surface oxidation stability after extreme shock environment exposure.
- Electrochemical modulation of LSPR in fabricated devices revealed MLC states, with more apparent operation in Sn(II) precursor NCs due to delayed Sn(IV) incorporation.
Conclusions:
- The Sn(II) precursor leads to more effective MLC operation in indium tin oxide NC-based devices, attributed to delayed aliovalent substitutional doping.
- Indium tin oxide nanocrystals exhibit robust performance and stability under extreme conditions, suitable for harsh environment applications.
- The study highlights the critical role of dopant precursor chemistry in tailoring semiconductor nanocrystal properties for advanced optoelectronic functionalities.
