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Updated: Jan 18, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Tuning the Electronic Structure in the MoS2/SrTiO3 Heterojunction via Phase Evolution of the SrTiO3 Substrate
Chenxi Huang1, Zeyu Li2,3, Jiefu Zhang1
1Department of Chemical Physics, Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China.
Abstract:
The coupling between transition metal dichalcogenides (TMDCs) and SrTiO3 has recently emerged as a fertile platform for discovering interfacial phenomena, where particle interactions, lattice coupling, and dielectric screening give rise to interesting physical effects. These hybrid systems hold significant promise for two-dimensional (2D) electronics, ferroelectric state control, and metastable phase engineering. However, effective modulation of the interfacial electronic structure remains a critical challenge. Here, we investigate the MoS2/SrTiO3 heterostructure using scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES), and photoemission spectroscopy (PES), complemented by first-principles calculations. We observe a temperature-dependent evolution of the electronic structure and local density of states driven by the structural phase transition of the SrTiO3 substrate. This modulation proceeds without conventional band reconstruction but leads to direct changes in the bandgap. Our findings may unveil a robust and spatially uniform mechanism for electronic structure control, offering a temperature-triggered degree of freedom for engineering interfacial states in TMDC-based devices.
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