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Updated: Jan 18, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Subnanometric Control of Coupling between WS2 Monolayers with a Molecular Spacer
Sara A Elrafei1, Tom T C Sistermans2,3, Alberto G Curto1,2,3
1Department of Applied Physics and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
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Stacking monolayer semiconductors into heterostructures allows for control of their optical and electronic properties, offering advantages for nanoscale electronics, optoelectronics, and photonics. Specifically, adding a thin spacer between monolayers can yield bulk materials that retain interesting monolayer properties, such as a direct bandgap and a high emission quantum efficiency. The interaction mechanisms between monolayers, including interlayer coupling, charge transfer, and energy transfer, might be tuned through subnanometric control over the spacer thickness. Traditional spacer materials like bulk oxides or other layered materials can suffer from poor material interfaces or inhomogeneous thickness over large areas. Here, we use a spin-cast organic molecular spacer to adjust interlayer coupling in WS2 monolayer stacks. We vary the molecular spacer thickness to tune the interlayer distance, significantly altering the optical properties of the resulting organic-inorganic heterostructures. Additionally, we demonstrate a dependence of the valence-band splitting on molecular spacer thickness manifested as a change in the energy difference between A and B excitons resulting from spin-orbit coupling and interlayer interactions. Our results illustrate the potential of molecular spacers to tailor the properties of monolayer heterostructures. This accessible approach opens routes to advancing atomically thin devices and could enable sensing technologies at the subnanometer scale.

