Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and Perspectives

Uncooled microbolometers play a pivotal role in infrared detection owing to their compactness, low power consumption, and cost-effectiveness. This review comprehensively summarizes recent progress in thermistor materials and focal plane arrays (FPAs), highlighting improvements in sensitivity and integration. Vanadium oxide (VO_x) remains predominant, with Al-doped films via atomic layer deposition (ALD) achieving a temperature coefficient of resistance (TCR) of -4.2%/K and significant 1/f noise reduction when combined with single-walled carbon nanotubes (SWCNTs). Silicon-based materials, such as phosphorus-doped hydrogenated amorphous silicon (α-Si:H), exhibit a TCR exceeding -5%/K, while titanium oxide (TiO_x) attains TCR values up to -7.2%/K through ALD and annealing. Emerging materials including GeSn alloys and semiconducting SWCNT networks show promise, with SWCNTs achieving a TCR of -6.5%/K and noise equivalent power (NEP) as low as 1.2 mW/√Hz. Advances in FPA technology feature pixel pitches reduced to 6 μm enabled by vertical nanotube thermal isolation, alongside the 3D heterogeneous integration of single-crystalline Si-based materials with readout circuits, yielding improved fill factors and responsivity. State-of-the-art VO_x-based FPAs demonstrate noise equivalent temperature differences (NETD) below 30 mK and specific detectivity (D*) near 2 × 10¹⁰ cm⋅Hz ^1/2/W. Future advancements will leverage materials-driven innovation (e.g., GeSn/SWCNT composites) and process optimization (e.g., plasma-enhanced ALD) to enable ultra-high-resolution imaging in both civil and military applications. This review underscores the central role of material innovation and system optimization in propelling microbolometer technology toward ultra-high resolution, high sensitivity, high reliability, and broad applicability.