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Updated: Jan 18, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Isotropic Zero Thermal Expansion in Yb(Al,Mn)2: Achieving Continuous Shiftability over a Wide Temperature Range.
Hao Wang1, Yuanji Xu2, Yuzhu Song1
1Department of Physical Chemistry, School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China.
Researchers developed lightweight, isotropic zero thermal expansion (ZTE) alloys with tunable temperature windows. This breakthrough in ZTE materials offers new possibilities for advanced technologies requiring dimensional stability.
Area of Science:
- Materials Science
- Condensed Matter Physics
Background:
- Zero thermal expansion (ZTE) materials are crucial for advanced technologies but face challenges like anisotropy and limited operating temperatures.
- Existing ZTE materials often exhibit limitations such as ferromagnetism, high density, and narrow ZTE temperature windows.
Purpose of the Study:
- To achieve lightweight, nonferromagnetic, and isotropic ZTE materials with tunable temperature windows.
- To elucidate the underlying mechanisms responsible for the observed zero thermal expansion behavior and its shiftability.
Main Methods:
- Synthesis and characterization of Yb(Al,Mn)2 alloys.
- Utilizing advanced experimental techniques and first-principles calculations.
- Investigating valence fluctuations and local structural distortions.
Main Results:
- Achieved lightweight, nonferromagnetic, isotropic ZTE in Yb(Al,Mn)2 alloys.
- Demonstrated continuous shiftability of the ZTE temperature window from 140 K to 650 K.
- Identified valence fluctuations and Mn-3d/Yb-4f orbital hybridization as key mechanisms.
Conclusions:
- The study presents an unprecedented continuously shiftable ZTE temperature window in a mixed-valence system.
- Valence fluctuation modulation offers new strategies for designing advanced ZTE materials.
- These findings pave the way for next-generation devices demanding exceptional dimensional stability.
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