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Trap Engineering-Based Optimization via Polyetherimide with Molecular Semiconductor for Capacitive Energy Storage at

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Polyetherimide (PEI) composites with TCEHAQ molecular semiconductor show improved energy storage at high temperatures. This enhancement is achieved by reducing charge transport, leading to better dielectric performance in harsh conditions.

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Area of Science:

  • Materials Science
  • Polymer Science
  • Electrical Engineering

Background:

  • Polyetherimide (PEI) based dielectric composites are crucial for energy storage applications.
  • High-temperature performance remains a challenge for current dielectric materials.
  • Molecular semiconductors offer potential for enhancing dielectric properties.

Purpose of the Study:

  • To enhance the dielectric energy storage performance of PEI using a molecular semiconductor filler.
  • To investigate the effect of TCEHAQ on the electrical properties of PEI composites, especially at elevated temperatures.
  • To develop high-performance dielectric films for demanding environments.

Main Methods:

  • Incorporation of 5,6,12,13-tetrachloro-2,9-bis(2-ethylhexyl)anthra[2,1,9-def:6,5,10-d'e'f]diisoquinoline-1,3,8,10(2H,9H)-tetraone (TCEHAQ) into PEI matrix.
  • Characterization of dielectric properties, including breakdown strength, energy density, and efficiency.
  • Evaluation of material performance at both room temperature and 150 °C.

Main Results:

  • A PEI composite with 0.5 wt% TCEHAQ exhibited a breakdown strength of 600 MV/m at room temperature, a significant increase from pristine PEI.
  • Maximum discharge energy density (Ud) reached 5.99 J/cm³ with 96.5% discharge efficiency at room temperature.
  • At 150 °C, the 0.5 wt% TCEHAQ/PEI composite maintained a breakdown strength of 500 MV/m, with Ud of 3.68 J/cm³ and 81.0% efficiency.

Conclusions:

  • TCEHAQ effectively enhances the dielectric energy storage performance of PEI, particularly at elevated temperatures.
  • The addition of TCEHAQ immobilizes electrons and reduces charge transport, improving overall dielectric properties.
  • This method provides a viable route for fabricating high-performance, large-area dielectric energy storage films for harsh environments.