Preparation of Infrared Anti-Reflection Surfaces Based on Microcone Structures of Silicon Carbide

Silicon carbide (SiC) has become the material of choice for precision optical systems due to its exceptional optical characteristics. However, conventional anti-reflection strategies for SiC components predominantly utilize deposited thin-film coatings, which are frequently compromised by insufficient environmental robustness and long-term stability concerns. To overcome these limitations, direct nanostructuring of SiC substrates has emerged as a promising alternative solution. This work introduces an innovative graded-index microcone array design fabricated on SiC substrates, achieving superior broadband anti-reflection performance. Our two-step fabrication methodology comprises plasma-induced formation of tunable nanofiber etch masks through controlled argon bombardment parameters, followed by precision reactive ion etching (RIE) for microcone array formation. By systematically varying plasma exposure duration, we demonstrate precise control over nanofiber mask morphology, which in turn enables the fabrication of height-optimized SiC microcone arrays. The resulting structures exhibit exceptional optical performance, achieving an ultra-low average reflectivity of 2.25% across the spectral range of 2.5-8 μm. This breakthrough fabrication technique not only extends the available toolbox for SiC micro/nanofabrication but also provides a robust platform for next-generation optical applications. Unlike conventional thin-film approaches, our nanostructuring method preserves the intrinsic mechanical and environmental durability of the SiC substrate while delivering a favorable optical performance.