Study on the High-Temperature Microwave Absorption Performance and Mechanism of SiC Nanowire-Reinforced Porous Si₃N₄...

SiC nanowires (SiC_nw), due to their excellent dielectric properties, are promising high-temperature absorbing materials. However, the mechanism of their high-temperature absorption still requires further research. Therefore, porous SiC_nw/Si₃N₄ and SiC/Si₃N₄ ceramics with different SiC phase morphologies were fabricated using a simple precursor impregnation and pyrolysis method. The Fe impurity content of the Si₃N₄ powder raw material significantly affects the generation of SiC nanowires. When SiC exists in the form of nanowires, the excellent conductivity brought by the conductive network of the nanowires causes a significant response of the material's permittivity to temperature. When the test temperature is room temperature, SiC_nw/Si₃N₄ has excellent absorption performance with a minimum reflection loss of -29.75 dB at 2.16 mm and an effective absorption bandwidth of 3.72 GHz at 2.54 mm. As the test temperature increases to 300 °C, the effective absorption bandwidth of SiC_nw/Si₃N₄ covers the entire X-band. The porous SiC_nw/Si₃N₄ ceramics exhibit excellent electromagnetic wave absorption performance, demonstrating significant application potential for high-temperature environments.